SK Hynix to Invest 54 Trillion Won in New Memory Chip Fabs
The investment secures mid-to-long-term production capacity for AI memory demand, with the Yongin Y2 fab set to produce next-generation DRAM including HBM by 2029.
Reporting from 1 source: GIGAZINE.
SK Hynix announced plans to invest 54 trillion won (about 6 trillion yen) to build new memory chip factories in South Korea. The company will spend 35.2 trillion won on the Y2 DRAM fab in Yongin and 19.1 trillion won on the M17 NAND fab in Cheongju, with construction starting in 2027.
The Y2 fab in Yongin, about 40 kilometers south of Seoul, will be the second of four planned factories in the semiconductor cluster. It will have a total floor area of about 1.13 million square meters and will produce next-generation DRAM products, including high bandwidth memory. Construction begins in July 2027, with the first cleanroom opening in June 2029.
In Cheongju, the M17 fab will cover about 680,000 square meters and will be built alongside existing NAND flash memory plants M11, M12, and M15. Construction starts in February 2027, with the first cleanroom opening in December 2028. The master plan runs through April 2031.
Synthesized by Yomimono from the 1 cited source below, including Japanese-language reporting where cited, then editorially reviewed before publishing.